Search results for "NAND Flash"
showing 4 items of 4 documents
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?
2009
Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.
Improving MLC flash performance and endurance with extended P/E cycles
2015
The traditional usage pattern for NAND flash memory is the program/erase (P/E) cycle: the flash pages that make a flash block are all programmed in order and then the whole flash block needs to be erased before the pages can be programmed again. The erase operations are slow, wear out the medium, and require costly garbage collection procedures. Reducing their number is therefore beneficial both in terms of performance and endurance. The physical structure of flash cells limits the number of opportunities to overcome the 1 to 1 ratio between programming and erasing pages: a bit storing a logical 0 cannot be reprogrammed to a logical 1 before the end of the P/E cycle. This paper presents a t…
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
2008
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.